The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 1990
Filed:
Jun. 07, 1988
Applicant:
Inventors:
Wilhelmus J Josquin, Eindhoven, NL;
Henderikus Lindeman, Nijmegen, NL;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 51 ; 357 59 ; 357 54 ; 357 13 ; 357 40 ;
Abstract
A semiconductor device comprising a buried phosphor glass layer (5) consisting of a subjacent thick electrically insulating layer (4), a phosphor glass layer (6) and an overlying thin covering layer (7). According to the invention, the thicker electrically insulating layer (4) is locally removed and the combination of phosphor glass layer 6 and covering layer 7 is used as a dielectric for a capacitor. The invention also relates to a method of manufacturing a capacitor with indicated dielectric.