The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 1990
Filed:
Jun. 13, 1988
Applicant:
Inventor:
Kunio Nakamura, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 236 ; 357 51 ; 357 41 ;
Abstract
A dynamic memory device of one-transistor memory cell type is disclosed. A thick insulating layer is formed on the transistor and an aperture is provided in the thick insulating layer to reach the source or drain region of the transistor. A MOS type storage capacitor is formed within the aperture and above the upper surface of the insulating layer such that the capacitance of the capacitor within the aperture becomes larger than the capacitance of the capacitor above the upper surface of the insulating layer.