The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 1990
Filed:
Oct. 06, 1988
Applicant:
Inventors:
Henry R Berger, Durham, NC (US);
Gretchen M Adema, Durham, NC (US);
Assignee:
The BOC Group, Inc., New Providence, NJ (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D / ; H01L / ;
U.S. Cl.
CPC ...
427 96 ; 4271261 ; 4272552 ; 4272554 ; 437190 ; 437192 ; 437200 ; 437202 ;
Abstract
A simple method for forming a metallization for an integrated circuit comprises depositing on a silicon substrate a first layer of refractory metal and nitrogen solid mixture and depositing thereon a second layer of refractory metal. The resulting structure is heated to convert the first layer to refractory metal nitride and the second layer to refractory metal silicide by flow of silicon from the substrate. By appropriate masking of the substrate, formation of silicide in the second layer can be blocked, thus permitting formation of self-aligned metallization by selective etching.