The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 1990
Filed:
Nov. 07, 1988
Keiichi Noi, Tsuzuki, JP;
Akihiro Takami, Katano, JP;
Kazuhide Ebine, Katano, JP;
Kimiko Kumazawa, Ikoma, JP;
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Abstract
It is a voltage-dependent non-linear resistance ceramic composition comprising SrTiO.sub.3 as host material, Dy.sub.2 O.sub.3 or Dy.sub.2 O.sub.3 and Nb.sub.2 O.sub.5 or Ta.sub.2 O.sub.5 or Ta.sub.2 O.sub.5 and Nb.sub.2 O.sub.5 as accelerating agent for semiconductorization, thereby changing crystal to a low resistance, and changing crystal boundary to a high resistance. In case Dy.sub.2 O.sub.3 or Dy.sub.2 O.sub.3 and Nb.sub.2 O.sub.5 are used as the accelerating agent for semiconductorization, one kind or more selected from the group consisting of Na, K, Ca, Cd, In, Ba, Pb, Ag, Ce, La, Sc, Y, Cs, Au, Mg, Zr, Sn, Sb, W, Bi, Ni, Fe, Ga, Pt, Tl, Al, Si, Be, Li, Eu, Gd, Tb, Tm, Lu, Th, Ir, Os, Hf and Ru. Alternatively, in case Ta.sub.2 O.sub.5 or Ta.sub.2 O.sub.5 and Nb.sub.2 O.sub.5 are used as the accelerating agent for semiconductorization, one kind or more selected from the group consisting of Na, K, Ca, Cd, In, Ba, Pb, Mg, Zr, Sn, Sb, W, Bi, Eu, Gd, Tb, Tm, Lu, Th, Ir, Os, Hf, Ru, Ga, Pt, Tl, La, Sc, Y, Cs, and Au. As a result, baristor characteristic is obtainable by means of the high resistance at crystal boundaries and capacitor between crystal granules--crystal boundary--crystal granule. From this matter, an element having both functions of the baristor characteristics and the capacitor characteristics are obtainable, and performs effect in surge absorption and noise elimination.