The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 1990
Filed:
Oct. 25, 1988
Mitsuru Shimizu, Sakura, JP;
Nobuyuki Ikumi, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A memory cell contains a first MOS transistor, a second MOS transistor, and a capacitor, which are connected at the first ends to one another. A word line for a first cell series, is connected to the gates of first MOS transistors in the memory cells arrayed in a row. A word line for a second cell series, is connected to the gates of second MOS transistors arrayed in a column. A bit line for the first cell series, is connected to the second ends of the first MOS transistors in the row. A bit line for the second cell series, is connected to the second ends of the second MOS transistors in the column. A selection circuit selects the first cell series or the second cell series, according to an external input signal for cell series selection. According to the semiconductor memory deivce, one of the first and second cell array series of the memory cell array can be accessed according to a logic level of the array series select signal.