The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 1990
Filed:
May. 03, 1988
Josef Kemmer, Haimhausen, DE;
Gerhard Lutz, 8000 Munich 80, DE;
Peter Holl, 8000 Munich 80, DE;
Lothar Strueder, 8000 Munich 40, DE;
Messerschmitt-Boelkow-Blohm GmbH, Munich, DE;
Other;
Abstract
A semiconductor radiation detector has an at least partially or even completely depleted base region of a first conductivity, to which a bias voltage is applied, and has at least one output or read-out electrode at which a signal is produced by the charge carriers generated by radiation incident on the detector. The read-out or output electrode includes a highly doped region of the first or a second conductivity, onto which an insulating layer and thereupon a conducting electrode layer are applied for outputting the generated or induced signals. The voltage application to the highly doped region of the read-out or output electrode is achieved through a high impedance through the base region of the detector, from at least one electrode of the same conductivity as that of the output or read-out electrode. Thus, it is simply possible to capacitively couple the detector to external circuitry even if these external circuits have a complex structure or arrangement.