The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 1990

Filed:

Mar. 14, 1988
Applicant:
Inventors:

Michael Jansen, Los Angeles, CA (US);

Moshe Sergant, Culver City, CA (US);

Szutsun S Ou, Manhattan, CA (US);

Jaroslava Z Wilcox, Los Angeles, CA (US);

Jane J Yang, Los Angeles, CA (US);

Larry R Eaton, Huntington Beach, CA (US);

Assignee:

TRW Inc., Redondo Beach, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01S / ;
U.S. Cl.
CPC ...
357 17 ; 330-43 ; 372 45 ; 372108 ; 350 9617 ;
Abstract

A semiconductor diode structure including a light-absorbing substrate, an active region, and a pair of cladding layers surrounding the active region. Lasing is inhibited by means of an inclined end facet, which reflects light down into the substrate, where it is absorbed, to provide only one pass of the spontaneously emitted light through the active region. One disclosed embodiment has a conventional end facet for the out-coupling of edge-emitted light. Another embodiment includes a surface-emitting facet formed in an opening in the substrate adjacent to the inclined facet. Yet another embodiment has two inclined facets. One inclined facet may serve to reflect light into the absorbing substrate, or both may serve to reflect light through separate surface emitting facets.


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