The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 1990
Filed:
Jul. 08, 1988
Katumi Suzuki, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a Si substrate, a compound semiconductor layer selectively formed on one main surface of the Si substrate, a hole formed in the Si substrate to expose a portion of a back surface of the compound semiconductor layer, a microwave monolithic integrated circuit formed on a portion of an upper surface of the compound semiconductor layer just above the exposed portion of the back surface, and a metal layer covering the back surface of the Si substrate, the side walls of the hole and the exposed portion of the back surface of the compound semiconductor layer. A Si device may be formed on the portion of the upper surface of the Si substrate where the compound semiconductor layer is not formed. GaAs may be used for the compound semiconductor layer and the metal layer is connected to the ground line.