The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 1990
Filed:
Dec. 14, 1988
Applicant:
Inventors:
Da Y Wang, Lexington, MA (US);
Daniel T Kennedy, Burlington, MA (US);
Burton W MacAllister, Jr, Hudson, NH (US);
Assignee:
GTE Laboratories Incorporated, Waltham, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437180 ; 437245 ; 437247 ; 437 19 ; 437187 ; 437 39 ; 252520 ; 148D / ; 148D / ;
Abstract
A layer of chemically compatible conductive material is applied to ferroelectric semiconductor material having a permanent polarization below its Curie temperature. The materials are heated to a temperature above the Curie temperature of the ferroelectric semiconductor material and allowed to cool. The result is a low resistance contact. The ferroelectric semiconductive material may be a layer on a non ferroelectric semiconductor material with a matching work function or matching dopant levels.