The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 1990
Filed:
May. 09, 1988
Harry G Erhardt, Favetteville, NY (US);
Walter F Kosonocky, Skillman, NJ (US);
General Electric Company, Schenectady, NY (US);
Abstract
A semiconductor device and method of making the device in which portions of the device may be completed prior to forming the detector region. The device comprises a substrate, a first insulating layer over the substrate, a first level semiconductor layer over the first insulating layer, a second insulating layer over the semiconductor layer, a metallic contact extending through the second insulating layer and a third insulating layer overlying the contact. A detector region is spaced apart from the contact. The method comprises the steps of forming a first insulating layer over the substrate, forming a semiconductor layer over the first insulating layer, forming a contact through the second insulating layer, forming a third insulating layer over the contact and forming an opening through the first, second and third insulating layers and forming a detector region in the opening.