The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 1990
Filed:
Apr. 17, 1989
Applicant:
Inventors:
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; G01L / ;
U.S. Cl.
CPC ...
357 26 ; 357 25 ; 357 236 ; 73724 ; 361283 ;
Abstract
A pressure sensor of the field-effect type includes a transistor having a gate insulation film above which a hollow chamber is provided, a gate electrode movable and deformable by pressure is formed above the gate insulation film through the hollow chamber, and an auxiliary gate electrode is provided on the boundary plane between the gate insulation film and hollow chamber, whereby the value of pressure can be detected by the drain-current variation of the transistor.
Quick Actions:
Hijikigawa, Masaya. (1990). Field effect pressure sensor (U.S. Patent No. 4894698). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4894698
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