The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 1990
Filed:
Apr. 01, 1985
Byron G Bynum, Tempe, AZ (US);
Robert B Jarrett, Tempe, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method for limiting short circuit current flow in a Field Effect Transistor (FET) to limit the power dissipated therein includes sensing a rise in the drain-to-source voltage of the transistor and clamping the gate-to-source voltage to a predetermined adjustable value thereby reducing the magnitude of the short circuit current flow to within the safe operating characteristics of the device. A comparator switch circuit is responsive to the drain-to-source voltage of the FET exceeding a reference voltage value for clamping the gate-to-source voltage to a predetermined reduced voltage. A trimmable resistive network is connected between the gate and the source electrode of the transistor for adjusting the gate to source clamped voltage potential to compensate for variations in transistor transconductances from one transistor to the next that they may be used in conjunction with the electronic circuitry.