The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 1990

Filed:

Apr. 13, 1988
Applicant:
Inventors:

Tetsuya Ogushi, Kagoshima, JP;

Yoshinori Hakuraku, Kagoshima, JP;

Hisanao Ogata, Ibaraki, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; C23C / ;
U.S. Cl.
CPC ...
505-1 ; 20419224 ; 427 62 ; 4273839 ; 505725 ; 505730 ; 505731 ;
Abstract

Oxide materials having the formulae (L.sub.x A.sub.1-x).sub.i MO.sub.y, (L.sub.x A.sub.1-x).sub.i -M.sub.1-z Cu.sub.z O.sub.y and (L.sub.x A.sub.1-x).sub.i MO.sub.j-.delta. G.sub.k, wherein L is Sc, Y, lanthanides, etc.; A is Ba, Sr, Ca, etc.; M is V, Nb, Ta, Ti, Zr or Hf; 0<x<1; 0<z<1; i=1, 3/2 or 2; 0<y.ltoreq.4; G is F, Cl or N; .delta. is oxygen defect, and having a perovskite-like crystal structure, show superconductivity at a temperature higher than the liquid nitrogen temperature these oxide materials can be produced by a substitution diffusion reaction between a substrate and a film or layer deposited on the substrate.


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