The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 1989

Filed:

Feb. 29, 1988
Applicant:
Inventors:

Joseph M Duffalo, Mesa, AZ (US);

Steven C Lazar, Jr, Plano, TX (US);

Assignee:

Motorola Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F / ;
U.S. Cl.
CPC ...
330277 ; 330302 ; 330311 ;
Abstract

A gallium arsenide monolithic microwave integrated circuit amplifier comprising a first stage having a common gate field effect transistor to provide matching of the input impedance, a second stage having a common source field effect transistor to provide class A gain, and a third stage having a common source open drain field effect transistor to provide class B gain for the amplifier. This monolithic integrated circuit amplifier provides a gain of greater than 25 decibels over a frequency band of 400 Hz-1.5 GHz.


Find Patent Forward Citations

Duffalo, Joseph. (1989). Gallium arsenide power monolithic microwave integrated circuit (U.S. Patent No. 4890069). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4890069

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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