The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 1989
Filed:
Nov. 10, 1988
Applicant:
Inventors:
Isao Fukushi, Yokohama, JP;
Takahisa Muroi, Kawasaki, JP;
Assignees:
Fujitsu Limited, Kawasaki, JP;
Fujitsu VLSI Limited, Kasugai, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ;
U.S. Cl.
CPC ...
307446 ; 307443 ; 307570 ; 3073171 ;
Abstract
A bipolar-complementary metal oxide semiconductor circuit includes a p-channel MOS transistor, and an n-channel MOS transistor, first and second bipolar transistors. A base of the first bipolar transistor is connected to a negative power source through the n-channel MOS transistor. A diode is connected to the base and emitter of the first bipolar transistor. The diode functions to prevent a reverse-biased voltage exceeding a base-emitter breakdown voltage from being applied between the base and emitter of the first bipolar transistor.