The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 1989
Filed:
Dec. 28, 1988
Daniel Selle, Brunoy, FR;
Philippe Boissenot, Paris, FR;
U.S. Philips Corp., New York, NY (US);
Abstract
A method of manufacturing a hetero-junction bipolar transistor especially of gallium arsenide comprising the formation of epitaxial layers superimposed to obtain a collector layer (1) of the n.sup.+ type, an emitter layer (3) of the n-type, the formation of localized implantations of the p.sup.+ type to obtain the base region (31, 30) or of the n.sup.+ type to form collector contact islands (20). This method also including the formation of base contacts B (70) having the dimensions B.sub.0 and located at a relative distance of E.sub.1, then covering the metallization (70) of pads (81) of silica (Si.sub.3 N.sub.4) having edges perpendicular to the plane of the layers on which bear spacers of silicon nitride (Si.sub.3 N.sub.4) (52) having dimensions h.sub.1 defining with a high precision the dimension E.sub.0 =B.sub.1 -2h of the emitter contact E and the distances between the different collector (90), base (70) and emitter (90) contacts C, B and E, respectively.
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