The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 1989
Filed:
Jun. 16, 1981
Yasuaki Terui, Osaka, JP;
Abstract
A charge transfer device comprising a semiconductor body including a first conductivity type region and a second conductivity region which defines a charge transfer channel below a major surface of the semiconductor body. An insulative layer is provided on the major surface. A plurality of electrodes is attached to the insulative layer to produce potential wells in response to application of different potentials thereto with respect to a common electrode attached to the opposite surface of the semiconductor body. The n-type conductivity charge transfer channel includes a center section of lower impurity concentration and a peripheral section of higher impurity concentration which substantially eliminates the undesirable lateral field effect which would otherwise occur in an area adjacent to the boundary with the first conductivity region.