The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 1989
Filed:
May. 19, 1987
Deva N Pattanayak, Schenectady, NY (US);
Bantval J Baliga, Schenectady, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
A monolithically integrated lateral semiconductor device preferably comprising a pair of inherent transistors driven by an inherent lateral four layer structure is disclosed. The disclosed device includes inherent vertical and lateral bipolar transistors. An inherent lateral four layer structure is also included within the device to provide a sufficient base drive to fully turn on both the lateral and vertical inherent bipolar transistors. The lateral four layer structure can be controlled through an insulated gate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile