The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 1989

Filed:

May. 29, 1987
Applicant:
Inventor:

Ernst F Schloemann, Weston, MA (US);

Assignee:

Raytheon Company, Lexington, MA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ;
U.S. Cl.
CPC ...
365173 ; 365154 ; 365171 ;
Abstract

A random-access memory having a plurality of memory cells each cell including a magnetic storage element in which the magnetic storage element inlcudes a thin film of magnetic material disposed on a semiconductor substrate and having further disposed thereon transistors connected in a flip-flop type of configuration. In a preferred embodiment of the invention, the magnetic storage element comprises a thin magnetic film that has mutually orthogonal remanent magnetization states used for information storage. A pair of strip conductors used to provide connections to the flip-flop configuration of the transducers are magnetically coupled to the mutually orthogonal remanent magnetization states. By providing the thin film having a pair of mutually orthogonal remanent states used for information storage, a storage cell having a relatively high frequency response is provided.


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