The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 1989
Filed:
Oct. 26, 1988
Min-Liang Chen, Lower Macungie Township, PA (US);
Chung W Leung, South Whitehall Township, PA (US);
Chih-Yuan Lu, Lower Macungie Township, PA (US);
Nun-Sian Tsai, South Whitehall Township, PA (US);
American Telephone and Telegraph Company, AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
Silicides are important for submicron VLSIC technology. Problems have been found in forming silicides by known techniques involving simply depositing a metal film and heating that metal to form a silicide layer. This invention solves the problems through recognition that polymeric contamination can be left on the surface from commonly-used previous reactive ion etch steps, and removes any such contamination to metal deposition by the additional step of heating in dry oxygen at a low temperature, such as 800 degrees Centigrade, before the contamination has been significantly hardened.