The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 1989

Filed:

Oct. 30, 1987
Applicant:
Inventors:

James W Holm-Kennedy, Honolulu, HI (US);

David N Okada, Tempe, AZ (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 34 ; 357 43 ; 357 25 ; 357 30 ; 357 231 ;
Abstract

A merged channel and bipolar device which exploits the distributed character of the device generates useful electronic characteristics by controlling the current and voltage inputs to the four or more terminals attached to the device, said electronic characteristics being useful for affecting the ac and dc current gain of the device, its transconductance, non-linearities, the electronic output characteristics as a function of input signals, electronic switching, gain control, output limiting, heterodyning, harmonic generation and voltage references. Other applications which employ non-linear behavior include distributed amplification of traveling waves, multiple methods for chemical sensing and other sensor applications. The device behavior can be strongly affected by the device's distributed nature with bipolar behavior and FET behavior substantially different in different regions of the device, and the onset and distribution of this heterogenious behavior being affected directly by the input electrical voltages and currents. Channel geometry and conductivity and gate shape (where a gate is employed) can be used to affect the desired electrical performance. Sensing applications can be affected by intentional modification of surface parameters such as surface recombination, velocity, and by choice of gate materials and gate shape where a gate is used. Applications of the device encompass electrical parameter generation useful for circuit applications. An example is the generation of an accurate reference voltage V.sub.thg and constant current values, and transducing and sensing applications for sensing chemicals, magnetic fields, forces, pressure, and other tranducing stimuli.


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