The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 1989
Filed:
May. 16, 1989
Kenneth Kosai, Goleta, CA (US);
Santa Barbara Research Center, Goleta, CA (US);
Abstract
A MIS semiconductor device comprises a crystalline substrate having a first energy band gap and a crystalline passivation layer overlying a surface of the substrate. The passivation layer is comprised of a semiconductor material having a wider band gap than the semiconductor material of the substrate. In an illustrative embodiment of the invention a MIS semiconductor device comprises a mercury-cadmium-telluride (HgCdTe) substrate having a cadmium-telluride (CdTe) heterojunction formed thereon, the CdTe functioning as a layer of high-quality passivation. A metal gate insulator may be SiO.sub.2, low temperature CVD Si.sub.3 N.sub.4, or any other suitable insulator deposited at a relatively low temperature.