The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 1989
Filed:
Jul. 05, 1988
Junichi Takahashi, Yokohama, JP;
Daisuke Kosaka, Takarazuka, JP;
Hirotoshi Eguchi, Yokohama, JP;
Shoji Matsumoto, Minoo, JP;
Takashi Akahori, Yokohama, JP;
Hiroshi Yamazaki, Tokyo, JP;
Kouji Izumi, Yokohama, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
A semiconductor diffusion type force sensing apparatus includes a plate-like semiconductor substrate formed by a single crystal material, and a plurality of sensing elements each constituted by a substantially rectangular impurity-diffused region formed in the semiconductor substrate. The sensing elements have an electric resistance variable in accordance with a deformation thereof due to an external force exerted on the semiconductor substrate. The sensing elements are arranged in a direction in which a longitudinal direction of each of the sensing elements coincides with a crystal orientation of the semiconductor substrate having an external value of a longitudinal piezoresistance coefficient of the impurity-diffused region.