The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 1989
Filed:
Jan. 17, 1989
Applicant:
Inventors:
Gottfried H Dohler, Palo Alto, CA (US);
Ghulam Hasnain, Mtn. View, CA (US);
Jeffrey N Miller, Los Altos, CA (US);
Assignee:
Hewlett-Packard Company, Palo Alto, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437110 ; 148D / ; 148D / ; 148D / ; 148D / ; 148D / ; 148D / ; 156612 ; 357 16 ; 437 80 ; 437105 ; 437107 ; 437133 ; 437948 ;
Abstract
A molecular beam epitaxy (MBE) process in which some portions of the substrate are shadowed by a shadow mask from receiving at least one of the molecular beams used in the MBE process. This process is capable of producing NIPI superlattices that have selective contacts that are far superior to those which can be produced at present. This technique can also produce a wide variety of NIPI devices as well as other types of IC structures.