The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 1989

Filed:

Feb. 17, 1989
Applicant:
Inventors:

Toshio Enokida, Tokyo, JP;

Shigemasa Takano, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09B / ;
U.S. Cl.
CPC ...
540141 ; 540140 ; 252520 ; 2525011 ; 430 58 ; 430 72 ; 430 76 ;
Abstract

This invention provides an optical semiconductor material comprising: (1) a noncrystalline titanium phthalocyanine compound which does not show substantial X-ray diffraction peak in X-ray diffraction chart, (2) a pseudo-noncrystalline titanium phthalocyanine compound which shows broad X-ray diffraction peaks at Bragg angles of 6.9.degree., 15.5.degree., 23.4.degree. and 25.5.degree. measured by using CuK.alpha. beam and (3) an assembly of said noncrystalline titanium phthalocyanine compound and pseudo-noncrystalline titanium phthalocyanine compound. Further, this invention provides an electrophotographic plate comprising an electrically conductive substrate, and a charge-generating layer and charge-transferring layer on the electrically conductive substrate, characterized in that the charge-generating layer contains the above noncrystalline and/or pseudo-noncrystalline titanium phthalocyanine compound(s).


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