The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 1989
Filed:
Dec. 27, 1978
Applicant:
Inventor:
Thomas J Sanders, Indialantic, FL (US);
Assignee:
Harris Corporation, Melbourne, FL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 34 ;
Abstract
A vertical bipolar transistor including a base having impurity concentration equal in order of magitude to and being formed in the surface of an emitter, a collector having impurity concentration at least two orders of magnitude greater than and being formed in the surface of the base, and a ring having the same impurity conductivity type as the base, having impurity concentration at least three orders of magnitude greater than the base's and being formed at the junction of and in the surfaces of the base and emitter. The ring extends from the surface at to least the depth of the collector and not greater than the depth of the base.