The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 1989
Filed:
Jun. 29, 1988
Tsutomu Matsushita, Yokohama, JP;
Nissan Motor Company, Ltd., Yokohama, JP;
Abstract
A IC device includes an underlying layer of a first conductivity type, an overlying layer of the first conductivity type, an isolation layer of a second conductivity type formed between the underlying and overlying layers, and an isolation region of the second conductivity type extending into the overlying layer from a top surface and separating a second portion from a first portion of the overlying layer. The device also includes a channel region formed in the first portion of the overlying layer to form a vertical MOSFET and an auxiliary region formed in the second portion of the overlying layer to form an auxiliary integrated circuit component. A recombination layer of polycrystalline silicon or other material having abundant recombination centers is located under the second portion of the overlying layer.