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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4881056 B1

PDFFull Text
Date of Patent:
Nov. 14, 1989

Filed:

Apr. 11, 1988

Facedown-type semiconductor pressure sensor with spacer

Applicant:
Inventors:

Masahito Mizukoshi, Nagoya, JP;

Eishi Kawasaki, Kariya, JP;

Takeshi Miyajima, Kariya, JP;

Takeshi Fukazawa, Tokyo, JP;

Assignee:

Nippondenso Co., Ltd., Kariya, JP;

Attorney:

Cushman, Darby & Cushman

Primary Examiner:

Clifford C Shaw

Assistant Examiner:

M M Lateet

Int. Cl.
CPC ...
G01L / ;
U.S. Cl.
CPC ...
338-4 ; 338 42 ;
Abstract

A facedown-type semiconductor pressure sensor has a Si sensing element including a diaphragm, a spacer, and a piezoresistive device embedded in the diaphragm, and a pedestal. The spacer, which is positioned between the semiconductor substrate and the pedestal, has a photolitho-graphically etched hole such that the sensing element, the hole and the pedestal define a sealed chamber. The sealed pressure chamber is substantially aligned with the diaphragm.

Find Patent Forward Citations

Mizukoshi, Masahito. (1989). Facedown-type semiconductor pressure sensor with spacer (U.S. Patent No. 4881056). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4881056

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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