The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 1989
Filed:
Sep. 15, 1988
Applicant:
Inventors:
Yoshihiro Endo, Nara, JP;
Masashi Kawaguchi, Shiki, JP;
Hiroshi Kishishita, Nara, JP;
Hisashi Uede, Wakayama, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; B05D / ; C23C / ;
U.S. Cl.
CPC ...
427 38 ; 2041 / ; 2041921 ; 427 39 ; 427 66 ;
Abstract
A thin-film EL element is manufactured by forming a silicon nitride or silicon oxynitride film for a first dielectric layer by sputtering and a silicon nitride or silicon oxynitride film for a second dielectric layer by plasma chemical vapor deposition so that the element's resistance against moisture and mass productivity can be improved.