The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 1989
Filed:
May. 17, 1988
Kenji Matsumoto, Yokohama, JP;
Haruki Kurihara, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In a semiconductor laser, a substrate is composed of a semiconductor basement and a semiconductor current-blocking layer on the basement. A straight channel is grooved into the current-blocking-layer to reach the basement. The straight channel has a constant width and is composed of a shallow window-region-channels in the vicinity of the cavity mirrors and a deep gain-region-channel in the middle of the laser cavity. A first cladding layer is grown on the substrate. A semiconductor active layer is grown on the first cladding layer. A second cladding layer is grown on the active layer. A semiconductor ohmic contact layer is grown on the second cladding layer. A pair of electrodes is deposited on each of the upper and lower surfaces of the semiconductor laser device. A pair of cleaved facets is faced toward the direction perpendicular to the channel.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile