The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 1989

Filed:

Jul. 21, 1988
Applicant:
Inventors:

Wolfgang Kruehler, Unterhaching, DE;

Peter Milla, Munich, DE;

Assignee:

Siemens Aktiengesellschaft, Berlin and Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437-4 ; 437-2 ; 136244 ; 136258 ;
Abstract

Method for manufacturing a series-connected thin-film solar module of crystalline silicon upon which is formed an electrically conductive layer upon which is formed a p-doped polycrystalline silicon layer which is about 50 microns thick both being deposited on a large area of glass or ceramic substrate and a pn junction is formed in the p-doped polycrystalline silicon layer. Individual cells that have a width between one to two centimeters are formed by forming trenches so as to electrically insulate them from each other in the silicon layer and the trenches are filled with an insulator material. Front electrodes and electrodes for series interconnecting the individual cells are formed over the cells and into holes formed for that purpose and the method saves up to 80% of silicon material as compared to prior art methods.


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