The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 1989
Filed:
Mar. 30, 1989
Yoshihiro Yamaguchi, Urawa, JP;
Kiminori Watanabe, Kawasaki, JP;
Akio Nakagawa, Hiratsuka, JP;
Kazuyoshi Furukama, Kawasaki, JP;
Kiyoshi Fukuda, Yokohama, JP;
Katsujiro Tanzawa, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A dielectrically isolated semiconductor wafer substrate includes first and second semiconductive layers bonded to each other by a direct bonding technique in such a manner that an insulative layer is sandwiched therebetween. The first semiconductive layer is a first silicon layer having a (100) or (110) crystal surface orientation, while the second semiconductive layer is a second silicon layer having a (111) crystal surface orientation. Thereafter, a peripheral portion of the resultant substrate is removed, and a substrate of a slightly smaller size is obtained which is provided with an additionally formed new orientation flat.