The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 1989
Filed:
Mar. 09, 1989
Applicant:
Inventors:
Wilbur D Johnston, Jr, Mendham, NJ (US);
Charles W Tu, Basking Ridge, NJ (US);
Assignee:
American Telephone & Telegraph Company AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148 333 ; 148 334 ; 148D / ; 148D / ; 148D / ; 357-4 ; 357 2315 ; 357 237 ; 437 84 ; 437105 ; 437243 ; 437962 ;
Abstract
Certain semiconductor device structures are described in which single crystal layers of cubic Group II fluorides cover at least part of the surface of III-V semiconductor compound. The fluoride crystal has a cubic structure and may be lattice matched or lattice mismatched to the compound semiconductor substrate depending on fluoride composition. These fluoride single crystal layers are put down by a moleuclar beam epitaxy procedure using certain critical substrate temperature ranges and a particular cleaning procedure.