The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 1989
Filed:
May. 20, 1988
Applicant:
Inventors:
Noboru Hirakawa, Tokyo, JP;
Yasukazu Inoue, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 59 ; 357 54 ; 357 65 ; 357 71 ;
Abstract
A semiconductor device having a wiring layer composed of a polycrystalline silicon film and an aluminum film is disclosed. The wiring layer is provided on an insulating layer with the silicon film and the aluminum film formed on and having the same pattern with the silicon film, and the aluminum film is directly contacted to an impurity region of a substrate without interposing the silicon film.