The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 1989
Filed:
Dec. 29, 1986
Applicant:
Inventors:
Ning Hsieh, San Jose, CA (US);
Clinton C Kuo, Austin, TX (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 235 ; 357 41 ; 365185 ;
Abstract
A single transistor EEPROM cell utilizes a tunneling oxide erase mechanism in which the tunneling oxide overlies a portion of the channel region. In addition, an array of single transistor EEPROM cells having a layout which provides convenient byte-at-a-time erase and program operation is disclosed. Two bytes of the array along adjacent rows share a common source, which also forms the source of a pair of erase select transistors, one for each byte. The word lines/control gates of the two bytes form the gates of the two erase select transistors.