The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 1989
Filed:
Aug. 09, 1988
Hilda Kanber, Rolling Hills Estates, CA (US);
James C Chen, Torrance, CA (US);
Hughes Aircraft Company, Los Angeles, CA (US);
Abstract
A process for fabricating varactor diodes using ion implantation techniques is described herein. Three successive implanations of N-type ions into a GaAs semi-insulating substrate provide a deep N.sup.+ type conductivity layer about 2-3 microns below the front major surface with concentration of at least 2.times.10.sup.18 ions/cm.sup.3. A fourth implantation of N type ions forms an N type conductivity layer over the N.sup.+ layer. An implanation of P type ions forms the P type conductivity layer over the N type conducitivity layer. A single rapid thermal anneal is performed on the substrate to remove damage to the crystal structure and to electrically activate the implants. The basic doped layered semiconductor structure is thereby produced using ion implantation. This ion implantation process provides a method for fabricating monolithic diode devices reliably and in mass quantities, which can be integrated with other monolithic devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile