The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1989
Filed:
Aug. 11, 1986
Applicant:
Inventors:
Daniel L Ellsworth, Fort Collins, CO (US);
Maurice M Moll, Fort Collins, CO (US);
Assignee:
NCR Corporation, Dayton, OH (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M / ;
U.S. Cl.
CPC ...
363127 ; 357 42 ;
Abstract
An integrated circuit two transistor full wave rectifier suitable for fabrication in a CMOS, NMOS or PMOS process and characterized by a high level of integration based upon shared utilization of doped regions. In one form, the full wave rectifier is configured from two diode connected field effect transistors and two parasitic p-n junctions, all formed in a substrate region of common impurity type.
Ellsworth, Daniel. (1989). Two transistor full wave rectifier (U.S. Patent No. 4875151). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4875151
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile