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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4875086 B1

PDFFull Text
Date of Patent:
Oct. 17, 1989

Filed:

May. 22, 1987

Silicon-on-insulator integrated circuits and method

Applicant:
Inventors:

Satwinder D Malhi, Garland, TX (US);

Chi-Cheong Shen, Richardson, TX (US);

Kenneth E Bean, Richardson, TX (US);

Peng-Heng Chang, Dallas, TX (US);

Assignee:

Texas Instruments Incorporated, Dallas, TX (US);

Attorneys:

Hoel; Carlton H.

Comfort; James T.

Sharp; Melvin

Primary Examiner:

Rolf Hille

Assistant Examiner:

S V Clark

Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 54 ; 357 53 ; 357 59 ;
Abstract

Preferred embodiments include silicon-on-insulator structures (30) and integrated circuits include a thin single crystal silicon layer (32) on a silicon dioxide layer (34) which is on a polysilicon layer (36) bonded to a surface-oxidized silicon substrate (42) by a glass layer (38). Also, single crystal silicon layers on oxide on polysilicon substrates and methods of fabrication are included in the preferred embodiments.

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Malhi, Satwinder. (1989). Silicon-on-insulator integrated circuits and method (U.S. Patent No. 4875086). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4875086

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