The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1989
Filed:
Jan. 22, 1988
Applicant:
Inventor:
Kalipatnam V Rao, Plano, TX (US);
Assignee:
Texas Instrument Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 43 ; 437 46 ; 437 48 ; 437 49 ; 437 52 ; 437 47 ; 437 60 ; 437101 ; 437193 ; 437228 ; 437919 ; 357235 ;
Abstract
A process for obtaining extremely smooth interfaces of poly 1/inter-level dielectric film/poly 2 films. Essentially, the poly 1 layer is LPCVD-deposited in the amorphous phase and implant-doped, after which an appropriate dielectric film is deposited by LPCVD. Following this, the poly 1 is crystallized at a temperature of about 1000.degree. C., after which poly 2 is LPCVD-deposited and POCl.sub.3 -doped at 950.degree. C. The resulting poly 2/inter-level dielectric/poly 1 interfaces are extremely smooth on an atomic scale, even after other device fabrication thermal cycles, and are believed to resutl in superior leakage characteristics.