The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1989
Filed:
Jan. 19, 1988
David W Hughes, Chamblee, GA (US);
Robert K Feeney, Doraville, GA (US);
David R Hertling, Stone Mountain, GA (US);
Georgia Tech Research Corporation, Atlanta, GA (US);
Abstract
Method for altering an electrical characteristic of a circuit having at least one active semiconductor device involves applying at least one pulse--a voltage pulse, a current pulse, an energy pulse, or a power pulse and so forth--across the active semiconductor device, the pulse having sufficient amplitude of one or more of its electrical parameters and time duration to alter the electrical characteristics of the device, and thereby, the electrical characteristic of the circuit. The pulse is applied across the junction by applying it to at least one terminal or electrode which is contacted to semiconductor material disposed within the device. In a preferred embodiment of the inventive method, the amplitudes of the electrical parameters and the time duration of the at least one pulse should be high enough to ensure that dendrites or filaments of material from the electrode are formed in the semiconductor material of the active semiconductor device but whose dendrites or filaments are not of a geometry to cause a short cricuit to be formed between any pair of electrodes of the active semiconductor device.