The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1989
Filed:
Dec. 23, 1988
Jeffrey T Koze, Whitehall, PA (US);
Anton J Miller, Lehigh County, PA (US);
AT&T Bell Laboratories, Murray Hill, NY (US);
Abstract
An improvement in silicon wafer flatness is obtained by reducing the time spent in polishing the wafer. After a conventional lapping operation, the wafer is coated with an etch resistant coating, typically silicon nitride. A polishing step removes the nitride coating on the flat surfaces of the wafer, but leaves a nitride coating on the sides of pits that are formed in the lapping operation. The wafer is then etched, typically in KOH, to remove the silicon surface to below the depth of the pits. The undercutting of the nitride coating removes the pits, or leaves relatively small protrusions in their place. The protrusions may be removed by a short polishing operation. Other wafer types and etch-resistant materials are possible. Integrated circuits are typically formed on the wafers by lithography techniques that advantageously utilize the improved flatness.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile