The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 1989
Filed:
Dec. 21, 1988
Yvon Cazaux, Grenoble, FR;
Yves Thenoz, Grenoble, FR;
Didier Herault, Weyssinet, FR;
Pierre Blanchard, Verrieres le Buisson, FR;
Thomson-CSF, Paris, FR;
Abstract
Disclosed are a charge-coupled device with lowering of output potential as well as a method for the fabrication of this device. In a known way, the device comprises, upstream on a semiconducting substrate with a first type of doping (P), a semiconducting layer with a second type of doping (N) and an insulating layer covering the former layer. Pairs of electrodes are formed on the insulating layer. Each pair has a transfer electrode and a storage electrode. Zones with a third type of doping N.sup.+) are made in the layer of a second type (N). A layer with a third type of doping (N.sup.-) is made downstream, in the layer with a second type of doping, and, downstream, there is formed at least one other pair of additional transfer and storage electrodes. A zone with a fourth type of doping (N.sup.--) is made beneath the additional transfer electrode in the layer with a third type of doping (N.sup.-). This pair of additional electrodes and the zone with a fourth type of doping make it possible to obtain the lowering of transfer potential at output.