The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 1989
Filed:
Feb. 23, 1988
Applicant:
Inventors:
Arsam Antreasyan, Fanwood, NJ (US);
Paul A Garbinski, New Providence, NJ (US);
Vincent D Mattera, Jr, Flemington, NJ (US);
Henryk Temkin, Berkeley Heights, NJ (US);
Assignee:
American Telephone and Telegraph Company, AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 232 ; 357 22 ; 357 16 ; 357 65 ; 357 67 ; 357 71 ;
Abstract
Group III-V compound MISFETs include a low-doped diffusion barrier layer disposed between a source/drain contact-facilitating layer and the channel layer.