The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 1989

Filed:

Jun. 15, 1988
Applicant:
Inventor:

Sergio Bernardi, Turin, IT;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ; C30B / ; C30B / ;
U.S. Cl.
CPC ...
156621 ; 156601 ; 156622 ; 156624 ; 156D / ; 156D / ; 156D / ; 148D / ;
Abstract

A process for making single-crystal mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate, performed inside a reactor with two communication zones, kept at different and controlled temperatures. The growth solution is directly prepared inside the reactor by subjecting weighed cadmium and tellurium quantities and a mercury bath to a specific thermal cycle so that the mercury concentration in the solution is established by absorption from the vapor phase and is controlled by the lower temperature level.


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Bernardi, Sergio. (1989). Process for making monocrystalline hgcdte layers (U.S. Patent No. 4872943). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4872943

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