The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 1989
Filed:
Jun. 16, 1989
Applicant:
Inventors:
William C Rideout, Townsend, MA (US);
Elliot Eichen, Arlington, MA (US);
Assignee:
GTE Laboratories Incorporated, Waltham, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 99 ; 372 46 ; 372108 ;
Abstract
A novel method for reducing the facet reflectivities of semiconductor light sources and amplifiers concerns the use of a bulk (non-waveguiding) index-matched regrown end cap region at both of the major facet surfaces of the amplifier. The amplifier has a tilted stripe geometry which, in combination with the end cap regions, enable the amplifier to reproducibly achieve facet reflectivities of less than 10.sup.-5 while avoiding a facet coating step. The improved optical amplifier is more amenable to mass production and less sensitive to both wavelength and polarization.