The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 1989
Filed:
Sep. 12, 1988
Dora Plus, South Bound Brook, NJ (US);
Alfred C Ipri, Princeton, NJ (US);
General Electric Company, Schenectady, NY (US);
Abstract
A radiation hard memory cell comprises on an insulating substrate a low output impedance inverter made of a monocrystalline semiconductor and a high output impedance inverter made of a non-crystalline semiconductor in order to save space. The semiconductor can be Si and a barrier layer can be used. A method for making the cell comprises depositing and defining active layers, making gate insulating layers on the active layers, forming gates on the insulating layers, and forming source and drain regions in the active layers. One inverter can have its active and insulating layers formed before the remaining active layer is formed. The remaining active layer can then be simultaneously formed with the gate of the one active layer.