The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 1989
Filed:
Jul. 13, 1984
Applicant:
Inventors:
Satoshi Maeda, Yokohama, JP;
Hiroshi Iwai, Takaidonishi, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 236 ; 357 41 ;
Abstract
In a semiconductor device, a MOS transistor is formed in an island-like semiconductor region formed in a semiconductor substrate. The switching of the MOS transistor is controlled by changing a potential in the semiconductor region by means of a control circuit.
Maeda, Satoshi. (1989). Semiconductor device (U.S. Patent No. 4872042). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4872042
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile