The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 1989

Filed:

Apr. 23, 1987
Applicant:
Inventor:

Thomas N Jackson, Peekskill, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
557 16 ; 357 34 ; 357 63 ; 357 91 ;
Abstract

A vertical heterojunction equal area transistor and starting structure therefor is provided in which three epitaxial layers structure with wide band gap external layers and narrower band gap center layer is provided with peripheral impurity concentrations such that the area around the wide gap electrodes is high resistivity and the area around the center narrower gap region is high conductivity. A bipolar transistor of GaAs-Ge-GaAs is described.


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