The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 1989
Filed:
Jan. 29, 1988
Tadashi Maruyama, Yokohama, JP;
Yukio Wada, Yokohama, JP;
Tomohisa Shigematsu, Yokohama, JP;
Yasoji Suzuki, Yokohama, JP;
Makoto Yoshizawa, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A nonvolatile semiconductor memory device comprises a cell transistor formed of a floating gate type MOS transistor, for storing an electric charge, whose gate is connected to a control gate line layer, a first selecting transistor formed of an MOS transistor, whose gate is connected to a read gate line layer, whose source-drain path is connected at one end to a read line layer, and at the other end to one terminal of the source-drain path of the cell transistor, and a second selecting transistor formed of an MOS transistor, whose gate is connected to a write gate line layer, whose source-drain path is connected at one end to a write line layer, and at the other end to the other terminal of the source-drain path of a cell transistor. A power source voltage of 5 V can be supplied to the read line layer in the read mode.