The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 1989
Filed:
Mar. 03, 1987
Tadahiko Hotta, Hamamatsu, JP;
Osamu Hanagasaki, Hamamatsu, JP;
Yamaha Corporation, , JP;
Abstract
An electrode using Ti or Zr having a highly reactive property but insuring a good and stable electric contact with a silicon semiconductor device surrounded by an oxygen atom-containing insulating film is realized with simplified and reduced manufacturing steps at a reduced cost by first revealing a selective surface region of the silicon semiconductor through a window, and then laminating thereon including the selective surface region a first metal layer of Ti or Zr and then a second metal layer of Mo or W to cover and protect the first metal layer from oxidation, and then etching away the laminated layers leaving that portion corresponding to the selective surface region of the device, and thereafter heating the assembly to form a silicide of the first metal with silicon of the underlying semiconductor. The upper metal layer is covered with a protective insulating layer to avoid oxidation of the upper metal layer. The step of covering with the protective insulating layer should preferably be taken before the heat-treatment for the silicide formation.